@Article{macau_mods_00001356, author = {Beiranvand, Hamzeh and Rorok, Esmaeel and Liserre, Marco}, title = {Theoretical Evaluation of Semiconductor Loss Components Behavior in ISOP-DAB Converters}, journal = {2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG)}, year = {2019}, publisher = {IEEE}, address = {New York, NY}, keywords = {ISOP-DAB converter; IGBT losses; Gate driver losses; Blocking voltage}, abstract = {Input-Series Output-Parallel (ISOP) connected Dual-Active-Bridges (DABs) form an interesting topology which enable step down MVDC to LVDC by employing medium frequency transformers. Si-IGBT semiconductor devices are commonly used in power distribution grid applications such as Smart Transformers (STs) where both MVDC and LVDC energy ports can be presented. In this paper, Si-IGBT semiconductor loss components such as conduction, switching and gate driver losses behavior are theoretically evaluated in a wide range of blocking voltage, switching frequency and phase-shift angle of DAB converters. In addition, gate driver losses are approximated as a continuous function of blocking voltage based on available datasheets. The behavior of the loss components are analyzed for two 50 and 500 kW ISOP-DAB converters where DC voltage ratio is 10 kV/400V.}, isbn = {978-1-7281-3202-0}, doi = {10.1109/CPE.2019.8862369}, url = {https://macau.uni-kiel.de/receive/macau_mods_00001356}, url = {https://doi.org/10.1109/CPE.2019.8862369}, file = {:https://macau.uni-kiel.de/servlets/MCRFileNodeServlet/macau_derivate_00002403/Theoretical%20Evaluation%20of%20Semiconductor%20Loss.pdf:PDF}, language = {en} }