@Article{macau_mods_00001356,
  author = 	{Beiranvand, Hamzeh
		and Rorok, Esmaeel
		and Liserre, Marco},
  title = 	{Theoretical Evaluation of Semiconductor Loss Components Behavior in ISOP-DAB Converters},
  journal = 	{2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG)},
  year = 	{2019},
  publisher = 	{IEEE},
  address = 	{New York, NY},
  keywords = 	{ISOP-DAB converter; IGBT losses; Gate driver losses; Blocking voltage},
  abstract = 	{Input-Series Output-Parallel (ISOP) connected Dual-Active-Bridges (DABs) form an interesting topology which enable step down MVDC to LVDC by employing medium frequency transformers. Si-IGBT semiconductor devices are commonly used in power distribution grid applications such as Smart Transformers (STs) where both MVDC and LVDC energy ports can be presented. In this paper, Si-IGBT semiconductor loss components such as conduction, switching and gate driver losses behavior are theoretically evaluated in a wide range of blocking voltage, switching frequency and phase-shift angle of DAB converters. In addition, gate driver losses are approximated as a continuous function of blocking voltage based on available datasheets. The behavior of the loss components are analyzed for two 50 and 500 kW ISOP-DAB converters where DC voltage ratio is 10 kV/400V.},
  isbn = 	{978-1-7281-3202-0},
  doi = 	{10.1109/CPE.2019.8862369},
  url = 	{https://macau.uni-kiel.de/receive/macau_mods_00001356},
  url = 	{https://doi.org/10.1109/CPE.2019.8862369},
  file = 	{:https://macau.uni-kiel.de/servlets/MCRFileNodeServlet/macau_derivate_00002403/Theoretical%20Evaluation%20of%20Semiconductor%20Loss.pdf:PDF},
  language = 	{en}
}