PT Unknown AU Beiranvand, H Rorok, E Liserre, M TI Theoretical Evaluation of Semiconductor Loss Components Behavior in ISOP-DAB Converters SE 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG) PY 2019 PU IEEE DI 10.1109/CPE.2019.8862369 WP https://macau.uni-kiel.de/receive/macau_mods_00001356 LA en DE ISOP-DAB converter; IGBT losses; Gate driver losses; Blocking voltage SN 978-1-7281-3202-0 AB Input-Series Output-Parallel (ISOP) connected Dual-Active-Bridges (DABs) form an interesting topology which enable step down MVDC to LVDC by employing medium frequency transformers. Si-IGBT semiconductor devices are commonly used in power distribution grid applications such as Smart Transformers (STs) where both MVDC and LVDC energy ports can be presented. In this paper, Si-IGBT semiconductor loss components such as conduction, switching and gate driver losses behavior are theoretically evaluated in a wide range of blocking voltage, switching frequency and phase-shift angle of DAB converters. In addition, gate driver losses are approximated as a continuous function of blocking voltage based on available datasheets. The behavior of the loss components are analyzed for two 50 and 500 kW ISOP-DAB converters where DC voltage ratio is 10 kV/400V. PI New York, NY ER