000K  utf8
1500  eng
2050  urn:nbn:de:gbv:8:3-2021-00296-2
2051  10.1109/CPE.2019.8862369
3000  Beiranvand, Hamzeh
3010  Liserre, Marco
3010  Rorok, Esmaeel
4000  Theoretical Evaluation of Semiconductor Loss Components Behavior in ISOP-DAB Converters  [Beiranvand, Hamzeh]
4209  Input-Series Output-Parallel (ISOP) connected Dual-Active-Bridges (DABs) form an interesting topology which enable step down MVDC to LVDC by employing medium frequency transformers. Si-IGBT semiconductor devices are commonly used in power distribution grid applications such as Smart Transformers (STs) where both MVDC and LVDC energy ports can be presented. In this paper, Si-IGBT semiconductor loss components such as conduction, switching and gate driver losses behavior are theoretically evaluated in a wide range of blocking voltage, switching frequency and phase-shift angle of DAB converters. In addition, gate driver losses are approximated as a continuous function of blocking voltage based on available datasheets. The behavior of the loss components are analyzed for two 50 and 500 kW ISOP-DAB converters where DC voltage ratio is 10 kV/400V.
4950  https://doi.org/10.1109/CPE.2019.8862369$xR$3Volltext$534
4950  https://nbn-resolving.org/urn:nbn:de:gbv:8:3-2021-00296-2$xR$3Volltext$534
4961  https://macau.uni-kiel.de/receive/macau_mods_00001356
5051  621.3
5550  Blocking voltage
5550  Gate driver losses
5550  IGBT losses
5550  ISOP-DAB converter