000K utf8 1500 eng 2050 urn:nbn:de:gbv:8:3-2021-00296-2 2051 10.1109/CPE.2019.8862369 3000 Beiranvand, Hamzeh 3010 Liserre, Marco 3010 Rorok, Esmaeel 4000 Theoretical Evaluation of Semiconductor Loss Components Behavior in ISOP-DAB Converters [Beiranvand, Hamzeh] 4209 Input-Series Output-Parallel (ISOP) connected Dual-Active-Bridges (DABs) form an interesting topology which enable step down MVDC to LVDC by employing medium frequency transformers. Si-IGBT semiconductor devices are commonly used in power distribution grid applications such as Smart Transformers (STs) where both MVDC and LVDC energy ports can be presented. In this paper, Si-IGBT semiconductor loss components such as conduction, switching and gate driver losses behavior are theoretically evaluated in a wide range of blocking voltage, switching frequency and phase-shift angle of DAB converters. In addition, gate driver losses are approximated as a continuous function of blocking voltage based on available datasheets. The behavior of the loss components are analyzed for two 50 and 500 kW ISOP-DAB converters where DC voltage ratio is 10 kV/400V. 4950 https://doi.org/10.1109/CPE.2019.8862369$xR$3Volltext$534 4950 https://nbn-resolving.org/urn:nbn:de:gbv:8:3-2021-00296-2$xR$3Volltext$534 4961 https://macau.uni-kiel.de/receive/macau_mods_00001356 5051 621.3 5550 Blocking voltage 5550 Gate driver losses 5550 IGBT losses 5550 ISOP-DAB converter