000K utf8 1100 $c2025 1500 eng 2050 urn:nbn:de:gbv:8:3-2025-00343-7 2051 10.1002/adem.202401824 3000 Lamprecht, Rouven 3010 Gergs, Tobias 3010 Kohlstedt, Hermann 3010 Marquardt, Richard 3010 Trieschmann, Jan 3010 Vialetto, Luca 3010 Zahari, Finn Niclas 4000 $hWiley [Lamprecht, Rouven] 4000 Thickness‐Related Analog Switching in SiOx/Cu/SiOx Memristive Devices for Neuromorphic Applications$hWiley [Lamprecht, Rouven] 4030 $nWiley 4209 This study examines the development of TiN/SiOx/Cu/SiOx/TiN memristive devices for neuromorphic applications using wedge-type deposition and Monte Carlo simulations. Identifying critical parameters for the desired device characteristics can be challenging with conventional trial-and-error methods, which often obscure the effects of varying layer compositions. By employing an off-center thermal evaporation method, a thickness gradient of SiOx and Cu on a 4 inch wafer is created, facilitating detailed resistance map analysis through semiautomatic measurements. This approach allows for investigating the influence of layer composition and thickness while keeping other process conditions constant. Combining experimental data with simulations provides a precise understanding of layer thickness distribution and its impact on device performance. Optimizing the SiOx layers to be below 12 nm, coupled with a discontinuous Cu layer with a nominal thickness under 0.6 nm, exhibits analog switching properties with an Ron/Roff ratio of >100, suitable for neuromorphic applications, while R × A and power exponent γ analysis show signs of multiple conduction mechanisms. The findings highlight the importance of SiOx and Cu thickness in determining switching behavior, offering insights for developing high-performance analog switching components for bioinspired computing systems. 4950 https://doi.org/10.1002/adem.202401824$xR$3Volltext$534 4950 https://nbn-resolving.org/urn:nbn:de:gbv:8:3-2025-00343-7$xR$3Volltext$534 4961 https://macau.uni-kiel.de/receive/macau_mods_00005874 5051 600 5550 analog memristive devices 5550 resistive switching 5550 SiOx 5550 wedge-type deposition