Failure Detection in De-energized GaN-HEMT Switching Cells using Gate Driver-Induced Residual Voltage

The identification of device failures in gallium nitride (GaN)-based power converters is necessary for the replacement of damaged modules in de-energized systems. Existing failure detection methods depend on power circuit quantities and hence, are difficult to adapt for de-energized devices. Further, the surface-mount packaging of GaN-HEMTs hinders failure detection methods relying on external terminal measurements. In this paper, a gate driver-induced residual voltage, measured across the DC terminals of a GaN-HEMT switching cell, is used to detect the device failures within the cell. This method does not require the energization of the power circuit and can be implemented in-situ, without access to the device terminals. The proposed method, which requires only a DC bus voltage measurement, is validated using SPICE-based circuit simulations employing detailed semiconductor device models, and experimentally on GaN-HEMT switching cells in existing hardware.

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