Dissertation (Metadaten)
Titel:Electrochemical pore etching in III-V compounds
 
Autor:Sergiu Langa
 
URN:NBN:urn:nbn:de:gbv:8-diss-10560
 
Fakultät:Technische Fakultät
DDC Sachgebiet:540 Chemie
 
Datum der mdl. Prüfung:30.04.2004
 
Referent(in):Prof. Dr. H. Föll
Korreferent(en) Korreferentin:Prof. Dr. I.M. Tiginyanu, Prof. Dr. U. Gösele
 
Beschreibung (original):Pore formation in III-Vs provides for fascinating cross-disciplinary research. The main findings from the present work are: Current line oriented pores; Crystallographically oriented pores grow only along <111B> directions; Crystallographic pores promote the formation of unique pore domains; In InP, a self-organized single crystalline pore array was obtained; Well defined Bragg mirrors could be made; Voltage oscillations in the pore formation regime were observed; It was demonstrated, that crystallographic pores can intersect; It was shown that 3D structures can be obtained by the intersection of pores; Tetrahedron-like pores in GaAs have been observed; Integrated waveguide structures have been proposed; The first cathodoluminescence comparison between porous GaP and InP was made. A fundamental understanding of the underlying basic electrochemistry as well as the interactions between pores is very important. Concrete applications of porous III-Vs have to wait for more work in this area of research, but are certainly feasible based on the findings obtained so far.
 
(übersetzt):keine dt.-spr. Zusammenfassung
 
Schlagworte:III-V Compounds, Porous Materials, Electrochemical etching, Semiconductors, Photonic crystals, 2D and 3D Structuring
Drei-Fünf-Halbleiter ; Ätzen ; Elektrochemisches Verfahren
 
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