Geometric and electronic structure of misfit layered compounds and epitaxial thin films of PbS on transition metal dichalcogenides

Brandt, Julia

In the present thesis the geometric and electronic structures of the misfit layered compounds (PbS)$_{1.14}$NbS$_2$ and (PbS)$_{1.18}$TiS$_2$ have been investigated. The concept of growing misfit compounds by a chemical transport technique and by molecular beam epitaxy are explained. The crystals were characterized with respect to their stacking order, their lateral order, chemical purity and the properties of their cleavage plane. Misfit layered compounds exhibit outstanding properties that are connected to their unusual geometric structure: They consist of a highly ordered alternate stacking of two different subsystems. Due to the different symmetry of the subsystems a one-dimensional misfit is created along one in-plane layer axis. The influence of these geometric properties on the electronic structure was investigated by angle-resolved photoelectron spectroscopy with synchrotron radiation. The high stability and stacking order of misfit compounds could be attributed to a charge transfer as well as to covalent bonding. The one-dimensional misfit results in a change of the Fermi surface due to electron scattering by the quasiperiodic potential.

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Brandt, Julia: Geometric and electronic structure of misfit layered compounds and epitaxial thin films of PbS on transition metal dichalcogenides. 2003.

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