Electrochemical pore etching in III-V compounds
Pore formation in III-Vs provides for fascinating cross-disciplinary research. The main findings from the present work are: Current line oriented pores; Crystallographically oriented pores grow only along <111B> directions; Crystallographic pores promote the formation of unique pore domains; In InP, a self-organized single crystalline pore array was obtained; Well defined Bragg mirrors could be made; Voltage oscillations in the pore formation regime were observed; It was demonstrated, that crystallographic pores can intersect; It was shown that 3D structures can be obtained by the intersection of pores; Tetrahedron-like pores in GaAs have been observed; Integrated waveguide structures have been proposed; The first cathodoluminescence comparison between porous GaP and InP was made. A fundamental understanding of the underlying basic electrochemistry as well as the interactions between pores is very important. Concrete applications of porous III-Vs have to wait for more work in this area of research, but are certainly feasible based on the findings obtained so far.