Lanthanide ions doping effects on structural, electrophysical and functional properties of sol-gel fabricated PbTiO<sub>3 thin films
Perovskite-type lead titanate-based ferroelectrics became the most prominent candidates for applications in different kinds of modern transducers, sensors and actuators. Particular interest in these materials is driven by their unique dielectric, ferroelectric, pyroelectric and piezoelectric characteristics. The application of these materials in thin film form is even more attractive since it allows direct integration into existent semiconductor technology. The properties of lead-titanate based ferroelectrics are known to strongly depend on the stoichiometry and nature of substituent elements either on Pb (A) or Ti (B) sites. In this respect, appropriate doping by different elements offers the possibility to tune materials functional properties. A modified sol-gel method was adopted to fabricate lead titanate thin films doped with Ce, Sm, Dy, Er and Yb. The structural, dielectric, ferroelectric, leakage current and functional properties were investigated in order to reveal the effects of nature and concentration of doping ions, substrate heterostructure and film thickness on the main characteristics of the films.
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