Development and characterisation of a process technology for a 0.25µm SiGe:C RF-BiCMOS embedded flash memory
Integrating an embedded-flash memory module into a 0.25µm SiGe:C BiCMOS technology provides an important base for realising microelectronic systems that combine complex logic functionality with highest frequency analogue performance („System-on-Chip“). This dissertation presents for the first time an embedded flash memory module integrated in a 0.25µm SiGe:C BiCMOS process technology and describes the implementation into a process pilot line. The principle process flow and important process steps are described in detail, reviewing also the impact on the original BiCMOS process. The results are assessed geometrically by means of electron microscopy and electrically by characterisation of the developed electronic devices. The influence of important technological parameters is hereby investigated. The feasibility of the process for medium density memory production is finally demonstrated by a first 1-Mbit memory circuit that has been developed and produced based on the presented process technology.