Development of Transition Metal Dichalcogenide Memristive Materials and Devices for Neuromorphic Systems

Rising global computational demand is pushing conventional CMOS technologies toward their limits, creating an urgent need for energy-efficient computing architectures. Neuromorphic engineering addresses this challenge by replicating the brain’s co-location of memory and computation in hardware. Transition metal dichalcogenides (TMDCs) are promising in this context, offering atomically thin scalability and resistive switching behavior that mimics synaptic functions. However, reproducible wafer-scale deposition and reliable integration into memristive devices remain key challenges. This work investigates the three representative TMDCs molybdenum disulfide, hafnium disulfide, and tungsten disulfide, selected to reflect contrasts in research maturity, stability, CMOS compatibility, and switching behavior. This enables a systematic evaluation of factors governing device performance and reliability. The methodology combines wafer-scale deposition, device fabrication, and correlative structural–electrical characterization. Material quality and degradation are assessed using optical and spectroscopic techniques, while electrical measurements analyze switching dynamics to link processing parameters with device performance. Results show that atomic layer deposition provides a scalable route for thin films suitable for memristive operation. Encapsulation is identified as a critical factor for structural stability and electrical endurance. Fabrication approaches based on sputtering, atomic layer deposition, and chemical vapor deposition demonstrate adaptability across different materials. Overall, the findings confirm the feasibility of wafer-scale TMDC processing for memristive applications and highlight encapsulation as essential for device reliability. The developed fabrication strategies and device concepts expand the design space for TMDC-based systems and support further progress toward complex neuromorphic hardware.

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