Gate driver for the active thermal control of a DC/DC GaN-based converter

Kumar Prasobhu, Pramod ORCID; Buticchi, Giampaolo ORCID; Brueske, Stephan; Liserre, Marco ORCID

Wide-Band-Gap power semiconductors based on SiC and GaN offer some significant advantages compared to Si-devices, in particular higher switching speed and higher operating temperature. These features offer potentially increased power density, which makes the temperature management critical especially for the PCB and components to which the GaN is connected. In this paper, an active gate driver with active thermal control is implemented and can be used to alter the losses of a DC/DC buck converter based on GaN transistors, with the aim of reducing the thermal cycling thus improving the converter's lifetime.

Preview

Cite

Citation style:

Kumar Prasobhu, Pramod / Buticchi, Giampaolo / Brueske, Stephan / et al: Gate driver for the active thermal control of a DC/DC GaN-based converter. 2016.

Could not load citation form. Default citation form is displayed.

Rights

Use and reproduction:No Creative Commons License - The german copyright act (UrhG) appliesPlease note that individual components of the publication may be subject to other licensing or copyright conditions.

Export